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SI7463ADP-T1-GE3
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberSI7463ADP-T1-GE3
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 39 W; Avalanche Energy Rating (EAS): 45 mJ; Package Shape: RECTANGULAR;
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Datasheet
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DetailsSI7463ADP-T1-GE3 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 46 A |
| Maximum Pulsed Drain Current (IDM): | 70 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 39 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-XDSO-C5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | C BEND |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .01 ohm |
| Avalanche Energy Rating (EAS): | 45 mJ |
| Other Names: | SI7463ADP-T1-GE3TR SI7463ADP-T1-GE3DKR SI7463ADP-T1-GE3CT SI7463ADP-T1-GE3-ND |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 40 V |
| Maximum Drain Current (Abs) (ID): | 46 A |
