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SI7431DP-T1-GE3
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberSI7431DP-T1-GE3
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5.4 W; Maximum Drain Current (ID): 2.2 A; Minimum DS Breakdown Voltage: 200 V;
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Datasheet
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DetailsSI7431DP-T1-GE3 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 2.2 A |
| Maximum Pulsed Drain Current (IDM): | 30 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 5 |
| Maximum Power Dissipation (Abs): | 5.4 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-XDSO-C5 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | C BEND |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .174 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 45 mJ |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 200 V |
| Qualification: | Not Qualified |
| Additional Features: | ULTRA-LOW RESISTANCE |
| Maximum Drain Current (Abs) (ID): | 2.2 A |
| Peak Reflow Temperature (C): | 260 |
