BSZ097N04LSGATMA1 by Infineon Technologies

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BSZ097N04LSGATMA1

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part Number
    BSZ097N04LSGATMA1
  • Description
    N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .0142 ohm;
  • Datasheet

820 In Stock

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BSZ097N04LSGATMA1 Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 160 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0142 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 20 mJ
Other Names: BSZ097N04LS G
BSZ097N04LSGINTR
BSZ097N04LSGATMA1TR
SP000388296
BSZ097N04LSGXT
2156-BSZ097N04LSGATMA1TR
BSZ097N04LSG
BSZ097N04LSGATMA1CT
BSZ097N04LSGINCT
BSZ097N04LSGINTR-ND
BSZ097N04LSGINCT-ND
BSZ097N04LSGATMA1DKR
BSZ097N04LSGINDKR-ND
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE

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