BSZ097N04LSGATMA1 by Infineon Technologies

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BSZ097N04LSGATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSZ097N04LSGATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .0142 ohm;
Datasheet

Datasheet

820 In Stock

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BSZ097N04LSGATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12 A
Maximum Pulsed Drain Current (IDM):	160 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0142 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	20 mJ
Other Names:	BSZ097N04LS G BSZ097N04LSGINTR BSZ097N04LSGATMA1TR SP000388296 BSZ097N04LSGXT 2156-BSZ097N04LSGATMA1TR BSZ097N04LSG BSZ097N04LSGATMA1CT BSZ097N04LSGINCT BSZ097N04LSGINTR-ND BSZ097N04LSGINCT-ND BSZ097N04LSGATMA1DKR BSZ097N04LSGINDKR-ND
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE

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