BSP149H6327XTSA1 by Infineon Technologies

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BSP149H6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

BSP149H6327XTSA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.8 W; Reference Standard: AEC-Q101; JESD-30 Code: R-PDSO-G4;
Datasheet

Datasheet

581 In Stock

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Details

BSP149H6327XTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.66 A
Maximum Pulsed Drain Current (IDM):	2.6 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	4
Maximum Power Dissipation (Abs):	1.8 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	1.8 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	SP001058818 BSP149H6327XTSA1CT BSP149H6327XTSA1DKR BSP149H6327XTSA1TR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	200 V
Reference Standard:	AEC-Q101
Maximum Drain Current (Abs) (ID):	.66 A
Peak Reflow Temperature (C):	260

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