SI7252DP-T1-GE3 by Vishay Intertechnology

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SI7252DP-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SI7252DP-T1-GE3
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 36.7 A; Maximum Pulsed Drain Current (IDM): 80 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet

Datasheet

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SI7252DP-T1-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	36.7 A
Maximum Pulsed Drain Current (IDM):	80 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-C6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.017 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	20 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	100 V
Peak Reflow Temperature (C):	260

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