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DN3535N8-G

Manufacturer

Microchip Technology
Manufacturer's Part Number

DN3535N8-G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Drain-Source On Resistance: 10 ohm; Terminal Finish: MATTE TIN;
Datasheet

Datasheet

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DN3535N8-G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	35 ns
Maximum Drain Current (ID):	.23 A
Maximum Pulsed Drain Current (IDM):	.5 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.6 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	50 ns
JESD-30 Code:	R-PSSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	10 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	10 pF
JEDEC-95 Code:	TO-243AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified

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