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SCT2080KEC

Manufacturer

ROHM
Manufacturer's Part Number

SCT2080KEC
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 262 W; Transistor Element Material: SILICON CARBIDE; Maximum Feedback Capacitance (Crss): 16 pF;
Datasheet

Datasheet

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SCT2080KEC Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	40 A
Maximum Pulsed Drain Current (IDM):	80 A
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	262 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.117 ohm
Maximum Feedback Capacitance (Crss):	16 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	1200 V
Maximum Drain Current (Abs) (ID):	40 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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