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| QTY | Unit Price | Ext Price |
| 905 | $0.530 | $479.740 |
BSZ067N06LS3GATMA1
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberBSZ067N06LS3GATMA1
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 60 V;
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Datasheet
905 In Stock
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DetailsBSZ067N06LS3GATMA1 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 14 A |
| Maximum Pulsed Drain Current (IDM): | 80 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 8 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N8 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .0121 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 118 mJ |
| Other Names: | BSZ067N06LS3G BSZ067N06LS3GINCT-ND SP000451080 BSZ067N06LS3GATMA1CT BSZ067N06LS3GATMA1DKR BSZ067N06LS3GINTR-ND BSZ067N06LS3GINCT BSZ067N06LS3GATMA1TR BSZ067N06LS3GINDKR BSZ067N06LS3 G BSZ067N06LS3GINDKR-ND BSZ067N06LS3GINTR BSZ067N06LS3GZT |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Additional Features: | LOGIC LEVEL COMPATIBLE |