SQM120P06-07L-GE3 by Vishay Intertechnology

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SQM120P06-07L-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SQM120P06-07L-GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Maximum Pulsed Drain Current (IDM): 480 A; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

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SQM120P06-07L-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	120 A
Maximum Pulsed Drain Current (IDM):	480 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0067 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	320 mJ
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified

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