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IRF640

Manufacturer

National Semiconductor
Manufacturer's Part Number

IRF640
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 18 A; JESD-609 Code: e0;
Datasheet

Datasheet

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IRF640 Technical Details

TYPE	DESCRIPTION
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	18 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
JESD-609 Code:	e0
Maximum Power Dissipation (Abs):	125 W
No. of Elements:	1
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	18 A

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