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IRF5210STRLPBF
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberIRF5210STRLPBF
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
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Datasheet
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DetailsIRF5210STRLPBF Technical Details
TYPE | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 38 A |
Maximum Pulsed Drain Current (IDM): | 140 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN OVER NICKEL |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 170 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .06 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 120 mJ |
JEDEC-95 Code: | TO-263AB |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Not Qualified |
Additional Features: | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE |
Maximum Drain Current (Abs) (ID): | 38 A |
Peak Reflow Temperature (C): | 260 |