SQJ431EP-T1_GE3 by Vishay Intertechnology

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SQJ431EP-T1_GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SQJ431EP-T1_GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 12 A; Minimum DS Breakdown Voltage: 200 V; Package Body Material: PLASTIC/EPOXY;
Datasheet

Datasheet

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SQJ431EP-T1_GE3 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	80 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	12 A
Maximum Pulsed Drain Current (IDM):	40 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.221 ohm

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