SUM70101EL-GE3 by Vishay Intertechnology

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SUM70101EL-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SUM70101EL-GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 281 mJ; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .0101 ohm;
Datasheet

Datasheet

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SUM70101EL-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	120 A
Maximum Pulsed Drain Current (IDM):	240 A
Surface Mount:	YES
Terminal Finish:	PURE MATTE TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.0101 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	281 mJ
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	P-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V

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