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NVTFS5116PLTWG

Manufacturer

Onsemi
Manufacturer's Part Number

NVTFS5116PLTWG
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; Maximum Drain-Source On Resistance: .072 ohm; Operating Mode: ENHANCEMENT MODE;
Datasheet

Datasheet

2287 In Stock

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NVTFS5116PLTWG Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	6 A
Maximum Pulsed Drain Current (IDM):	126 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	5
Maximum Power Dissipation (Abs):	3.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-F5
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.072 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	45 mJ
Other Names:	NVTFS5116PLTWGOSDKR NVTFS5116PLTWG-ND NVTFS5116PLTWGOSCT NVTFS5116PLTWGOSTR
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	14 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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