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IRFB4110PBF
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberIRFB4110PBF
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 370 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
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Datasheet
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DetailsIRFB4110PBF Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 120 A |
Maximum Pulsed Drain Current (IDM): | 670 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | TIN |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 370 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0045 ohm |
Avalanche Energy Rating (EAS): | 190 mJ |
JEDEC-95 Code: | TO-220AB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 180 A |