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RJK0651DPB-00-J5

Manufacturer

Renesas Electronics
Manufacturer's Part Number

RJK0651DPB-00-J5
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Pulsed Drain Current (IDM): 100 A; Transistor Element Material: SILICON;
Datasheet

Datasheet

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RJK0651DPB-00-J5 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	25 A
Maximum Pulsed Drain Current (IDM):	100 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	4
Maximum Power Dissipation (Abs):	45 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.018 ohm
Avalanche Energy Rating (EAS):	11.7 mJ
Other Names:	RJK0651DPB00J5 RJK0651DPB-00#J5DKR -1161-RJK0651DPB-00#J5CT RJK0651DPB-00#J5-ND RJK0651DPB-00#J5TR RJK0651DPB-00#J5CT
Maximum Feedback Capacitance (Crss):	100 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	25 A

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