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IRFR5505TRPBF
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ManufacturerInternational Rectifier
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Manufacturer's Part NumberIRFR5505TRPBF
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; JEDEC-95 Code: TO-252AA; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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Datasheet
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DetailsIRFR5505TRPBF Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 18 A |
Maximum Pulsed Drain Current (IDM): | 64 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) - with Nickel (Ni) barrier |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 57 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .11 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 150 mJ |
JEDEC-95 Code: | TO-252AA |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 55 V |
Qualification: | Not Qualified |
Additional Features: | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
Maximum Drain Current (Abs) (ID): | 18 A |
Peak Reflow Temperature (C): | 260 |