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FDC5614P

Manufacturer

Msksemi Semiconductor
Manufacturer's Part Number

FDC5614P
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
Datasheet

Datasheet

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FDC5614P Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	32 pF
Maximum Drain Current (ID):	3.3 A
Maximum Pulsed Drain Current (IDM):	13.2 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	6
Minimum DS Breakdown Voltage:	60 V
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	2 W
Maximum Drain-Source On Resistance:	.105 ohm

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