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FDD6685

Manufacturer

Fairchild Semiconductor
Manufacturer's Part Number

FDD6685
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2;
Datasheet

Datasheet

1951 In Stock

Popular Products

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1N4148WS

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2N2222A

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BAV99

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FDC5614P

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FDD6685 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	11 A
Maximum Pulsed Drain Current (IDM):	100 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	52 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.02 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	FDD6685CT FDD6685-ND FDD6685TR 2832-FDD6685 2156-FDD6685-OS ONSONSFDD6685 FDD6685DKR
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	11 A
Peak Reflow Temperature (C):	260

Category Top Products

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BSC500N20NS3GATMA1 by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 97A IDM. Ideal for SWITCHING applications, it features a 0.05 ohm Drain-Source On Resistance, 120mJ EAS rating, and operates in ENHANCEMENT MODE.

SQM120P10-10M1L_GE3

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Vishay Intertechnology's SQM120P10-10M1L_GE3 is a P-channel FET with 100V DS breakdown voltage, 480A IDM, and 0.0101 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

RFD16N05LSM9A

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FDD8424H_F085A

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FDD8424H_F085A by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 40V DS breakdown voltage, 55A max pulsed drain current, and 0.024 ohm max drain-source resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance.

STN1NK80Z

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STN1NK80Z by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features 5A IDM, 16 ohm RDS(on), and 50mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.