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BAV99LT1G
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ManufacturerOnsemi
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Manufacturer's Part NumberBAV99LT1G
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DescriptionRECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
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Datasheet
657 In Stock
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DetailsBAV99LT1G Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 40 |
| Maximum Forward Voltage (VF): | .715 V |
| Config: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
| Diode Type: | RECTIFIER DIODE |
| Maximum Output Current: | .215 A |
| Sub-Category: | Rectifier Diodes |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 3 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 150 Cel |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | BAV99LT1GOSDKR BAV99LT1GOSCT BAV99LT1GOSTR 2156-BAV99LT1G-OS ONSONSBAV99LT1G |
| No. of Phases: | 1 |
| Maximum Repetitive Peak Reverse Voltage: | 100 V |
| JEDEC-95 Code: | TO-236 |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -65 Cel |
| Maximum Non Repetitive Peak Forward Current: | 2 A |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Maximum Power Dissipation: | .225 W |
| Peak Reflow Temperature (C): | 260 |
| Maximum Reverse Recovery Time: | .006 us |
