2N7002DWH6327XTSA1 by Infineon Technologies

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2N7002DWH6327XTSA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

2N7002DWH6327XTSA1
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V; Terminal Form: GULL WING;
Datasheet

Datasheet

301 In Stock

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2N7002DWH6327XTSA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.3 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	3 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	2832-2N7002DWH6327XTSA1 2N7002DWH6327XTSA1CT 2N7002DW H6327TR-ND SP000917596 2N7002DW H6327DKR-ND 2N7002DW H6327-ND 2N7002DW H6327 2N7002DW H6327DKR 2N7002H6327XT 2N7002DWH6327XTSA1DKR 2N7002DW H6327CT-ND 2N7002DW H6327CT 2N7002DWH6327 2N7002DWH6327XTSA1TR
Maximum Feedback Capacitance (Crss):	3 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

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2N7002DWH6327XTSA1

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2N7002DWH6327XTSA1 by Infineon: N-CHANNEL FET with 60V DS Breakdown Voltage, 0.3A ID, and 3ohm RDS. Ideal for SWITCHING applications in small outline packages with GULL WING terminals.