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STW12N120K5

Manufacturer

STMicroelectronics
Manufacturer's Part Number

STW12N120K5
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Drain Current (Abs) (ID): 12 A; Minimum DS Breakdown Voltage: 1200 V;
Datasheet

Datasheet

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STW12N120K5 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	12 A
Maximum Pulsed Drain Current (IDM):	48 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.69 ohm
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	1200 V
Maximum Drain Current (Abs) (ID):	12 A
Peak Reflow Temperature (C):	NOT SPECIFIED

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