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DMG6602SVT-7

Manufacturer

Diodes Incorporated
Manufacturer's Part Number

DMG6602SVT-7
Description

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.27 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
Datasheet

Datasheet

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DMG6602SVT-7 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.7 A
Maximum Pulsed Drain Current (IDM):	13 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	6
Maximum Power Dissipation (Abs):	1.27 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.06 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	DMG6602SVT-7DITR DMG6602SVT7 DMG6602SVT-7DICT DMG6602SVT-7DIDKR
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	30 V
Additional Features:	HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	3.4 A
Peak Reflow Temperature (C):	260

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