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G3R350MT12D

Manufacturer

Genesic Semiconductor
Manufacturer's Part Number

G3R350MT12D
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON CARBIDE;
Datasheet

Datasheet

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G3R350MT12D Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
Maximum Pulsed Drain Current (IDM):	16 A
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	63 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.455 ohm
Avalanche Energy Rating (EAS):	43 mJ
Other Names:	1242-G3R350MT12D
Maximum Feedback Capacitance (Crss):	.8 pF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	1200 V
Reference Standard:	IEC-607478-4

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