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LND150N8-G

Manufacturer

Microchip Technology
Manufacturer's Part Number

LND150N8-G
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

51688 In Stock

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LND150N8-G Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.03 A
Maximum Pulsed Drain Current (IDM):	.03 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.6 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	1.6 W
Maximum Drain-Source On Resistance:	1000 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	1 pF
JEDEC-95 Code:	TO-243AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Qualification:	Not Qualified
Peak Reflow Temperature (C):	260

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