IPD90P04P4L04ATMA1 by Infineon Technologies

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IPD90P04P4L04ATMA1

  • Manufacturer
    Infineon Technologies
  • Manufacturer's Part Number
    IPD90P04P4L04ATMA1
  • Description
    P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 90 A; Maximum Drain-Source On Resistance: .0043 ohm; JEDEC-95 Code: TO-252;
  • Datasheet

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IPD90P04P4L04ATMA1 Technical Details

TYPE DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 90 A
Maximum Pulsed Drain Current (IDM): 360 A
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0043 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 60 mJ
JEDEC-95 Code: TO-252
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 40 V
Additional Features: LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C): NOT SPECIFIED

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