IPD90P04P4L04ATMA1 by Infineon Technologies

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IPD90P04P4L04ATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPD90P04P4L04ATMA1
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 90 A; Maximum Drain-Source On Resistance: .0043 ohm; JEDEC-95 Code: TO-252;
Datasheet

Datasheet

183 In Stock

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IPD90P04P4L04ATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	90 A
Maximum Pulsed Drain Current (IDM):	360 A
Surface Mount:	YES
Terminal Finish:	Tin (Sn)
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0043 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	60 mJ
Other Names:	IPD90P04P4L04ATMA1DKR IPD90P04P4L04ATMA1TR IPD90P04P4L04ATMA1CT SP000840194
JEDEC-95 Code:	TO-252
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Additional Features:	LOGIC LEVEL COMPATIBLE
Peak Reflow Temperature (C):	NOT SPECIFIED

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