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RJK0651DPB-00#J5
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ManufacturerRenesas Electronics
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Manufacturer's Part NumberRJK0651DPB-00#J5
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
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Datasheet
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DetailsRJK0651DPB-00#J5 Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 25 A |
Maximum Pulsed Drain Current (IDM): | 100 A |
Surface Mount: | YES |
Terminal Finish: | NICKEL PALLADIUM GOLD |
No. of Terminals: | 4 |
Maximum Power Dissipation (Abs): | 45 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G4 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .018 ohm |
Avalanche Energy Rating (EAS): | 11.7 mJ |
Maximum Feedback Capacitance (Crss): | 100 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e4 |
Minimum DS Breakdown Voltage: | 60 V |