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NCV8406ASTT3G

Manufacturer

Onsemi
Manufacturer's Part Number

NCV8406ASTT3G
Description

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.81 W; Transistor Application: SWITCHING; Transistor Element Material: SILICON;
Datasheet

Datasheet

1654 In Stock

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NCV8406ASTT3G Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	110 mJ
Other Names:	NCV8406ASTT3GOSTR NCV8406ASTT3GOSDKR NCV8406ASTT3GOSCT NCV8406ASTT3G-ND
Package Body Material:	PLASTIC/EPOXY
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-40 Cel
No. of Terminals:	4
Minimum DS Breakdown Voltage:	60 V
Maximum Power Dissipation (Abs):	1.81 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Reference Standard:	AEC-Q101
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.24 ohm

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