SQ2362ES-T1_GE3 by Vishay Intertechnology

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SQ2362ES-T1_GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SQ2362ES-T1_GE3
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Maximum Feedback Capacitance (Crss): 26 pF; Operating Mode: ENHANCEMENT MODE;
Datasheet

Datasheet

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SQ2362ES-T1_GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	40 ns
Maximum Drain Current (ID):	4.3 A
Maximum Pulsed Drain Current (IDM):	17 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn)
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	51 ns
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain-Source On Resistance:	.068 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	7 mJ
Maximum Feedback Capacitance (Crss):	26 pF
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	260

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