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SI7149ADP-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SI7149ADP-T1-GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: C BEND; No. of Terminals: 5; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

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SI7149ADP-T1-GE3 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	31.2 mJ
Other Names:	SI7149ADP-T1-GE3TR SI7149ADP-T1-GE3CT SI7149ADP-T1-GE3DKR
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	50 A
Maximum Pulsed Drain Current (IDM):	300 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Terminal Finish:	PURE MATTE TIN
No. of Terminals:	5
Minimum DS Breakdown Voltage:	30 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-C5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	C BEND
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0052 ohm
Moisture Sensitivity Level (MSL):	1

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