SI7149ADP-T1-GE3 by Vishay Intertechnology

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SI7149ADP-T1-GE3

  • Manufacturer
    Vishay Intertechnology
  • Manufacturer's Part Number
    SI7149ADP-T1-GE3
  • Description
    P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: C BEND; No. of Terminals: 5; Package Style (Meter): SMALL OUTLINE;
  • Datasheet

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SI7149ADP-T1-GE3 Technical Details

TYPE DESCRIPTION
Avalanche Energy Rating (EAS): 31.2 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 50 A
Maximum Pulsed Drain Current (IDM): 300 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: PURE MATTE TIN
No. of Terminals: 5
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-C5
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0052 ohm
Moisture Sensitivity Level (MSL): 1

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