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SI7149ADP-T1-GE3
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberSI7149ADP-T1-GE3
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: C BEND; No. of Terminals: 5; Package Style (Meter): SMALL OUTLINE;
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Datasheet
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DetailsSI7149ADP-T1-GE3 Technical Details
TYPE | DESCRIPTION |
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Avalanche Energy Rating (EAS): | 31.2 mJ |
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 50 A |
Maximum Pulsed Drain Current (IDM): | 300 A |
Polarity or Channel Type: | P-CHANNEL |
Surface Mount: | YES |
Terminal Finish: | PURE MATTE TIN |
No. of Terminals: | 5 |
Minimum DS Breakdown Voltage: | 30 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-C5 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | C BEND |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0052 ohm |
Moisture Sensitivity Level (MSL): | 1 |