IRFR5305TRPBF by International Rectifier

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
447	$0.323	$144.381

IRFR5305TRPBF

Manufacturer

International Rectifier
Manufacturer's Part Number

IRFR5305TRPBF
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;
Datasheet

Datasheet

447 In Stock

Popular Products

SMBJ18CA

Meritek Electronics

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148WS

Panjit International

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Diotec Semiconductor Ag

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

M24308/2-1F

Amphenol

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;

Details

BAV99

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SS14

Rugao Dachang Electronic

RECTIFIER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Maximum Forward Voltage (VF): .55 V; No. of Elements: 1; Technology: SCHOTTKY;

Details

BAV99

Microsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

NC7WZ17P6X

Onsemi

The Onsemi NC7WZ17P6X is a logic gate with 2 functions, featuring a propagation delay of 13.1 ns at 1.8V supply voltage. Ideal for industrial applications, it operates b/w -40 to 85°C and has a max power supply current of 100mA. With Schmitt Trigger technology and small outline packaging, it suits compact electronic designs requiring fast signal processing.

Details

BAV99

Toshiba

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

1N4148

Fairchild Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

SMBJ18CA

General Instrument

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

SMBJ18CA

Fairchild Semiconductor

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

M24308/2-1F

Air Electro

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;

Details

MBR0520LT1

Onsemi

MBR0520LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, making it suitable for applications requiring low power consumption in compact electronic devices. This single-configured diode is surface mountable and has a max repetitive peak reverse voltage of 20V, ideal for small outline package designs.

Details

ULN-2803A

Vishay Sprague

Vishay Sprague's ULN-2803A is an 8-bit peripheral driver with a max supply voltage of 3V. Featuring open-collector output characteristics, it offers built-in transient protections and operates b/w -20°C to 85°C. Ideal for applications requiring sink current flow direction, this rectangular-shaped driver has a terminal pitch of 2.54mm and turn-on/off time of 1us.

Details

2N2222A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

LL4148

Panjit International

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

2N7002

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified; Minimum Operating Temperature: -55 Cel;

Details

BAV99

Siemens

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Details

LM555CN

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

Details

IRFR5305TRPBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	31 A
Maximum Pulsed Drain Current (IDM):	110 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - with Nickel (Ni) barrier
No. of Terminals:	2
Maximum Power Dissipation (Abs):	110 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.065 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	280 mJ
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, HIGH RELIABILITY
Maximum Drain Current (Abs) (ID):	31 A
Peak Reflow Temperature (C):	260

Category Top Products

SI7155DP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7155DP-T1-GE3 is a P-channel FET with 40V DS breakdown voltage and 200A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 104W. The MOSFET features a drain-source on resistance of 0.0046 ohm and can withstand temperatures from -55 to 150°C.

IRF9640STRLPBF

Vishay Intertechnology

Vishay Intertechnology's IRF9640STRLPBF is a P-CHANNEL FET with 200V DS breakdown voltage and 44A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 0.5 ohm on-resistance and 125W power dissipation.

IRFP4568PBF

Infineon Technologies

Infineon's IRFP4568PBF is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 684A IDM and 0.0059 ohm RDS(on), it operates in ENHANCEMENT MODE up to 175°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in high-power circuits.

SI7315DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7315DN-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a 10A IDM and 0.315 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE with a 9.8mJ EAS rating. Suitable for surface mount designs, it has a SQUARE package shape and DUAL terminal position.

BSC500N20NS3GATMA1

Infineon Technologies

BSC500N20NS3GATMA1 by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 97A IDM. Ideal for SWITCHING applications, it features a 0.05 ohm Drain-Source On Resistance, 120mJ EAS rating, and operates in ENHANCEMENT MODE.

2N7002-G

Weitron Technology

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .25 A; Operating Mode: ENHANCEMENT MODE;

IRFP460

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-247AC;

NDT3055L

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;

FDS4559_F085

Fairchild Semiconductor

FDS4559_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 2 elements with built-in diode, suitable for SWITCHING applications. With 20A IDM and 0.055 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power electronics.

IRFR024NTRPBF

Infineon Technologies

IRFR024NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 71mJ EAS, and 0.075ohm RDS(ON). With a max power dissipation of 45W and operating temperature of 175°C, it's suitable for high-power electronic systems.

IRF740PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; JEDEC-95 Code: TO-220AB; Package Style (Meter): FLANGE MOUNT;

FDS3672

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;

FQT7N10LTF

Onsemi

FQT7N10LTF by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a Max IDM of 6.8A and EAS of 50mJ, suitable for SWITCHING applications. This SINGLE transistor in PLASTIC/EPOXY package operates in ENHANCEMENT MODE at up to 150°C, with 0.38 ohm RDS(on) and 2W Pdiss.

IRF540NSTRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Avalanche Energy Rating (EAS): 185 mJ; JESD-609 Code: e3;

FDS6680A

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;

NCV8406ASTT3G

Onsemi

NCV8406ASTT3G by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 1.81W Power Dissipation. Ideal for use in automotive electronics due to AEC-Q101 standard compliance.

BBS3002-DL-1E

Onsemi

BBS3002-DL-1E by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 400A IDM, and 0.009 ohm RDS(on). Ideal for power management applications due to its high drain current capacity and low on-resistance. Suitable for surface mount designs in various electronic systems requiring efficient power control.

IRF840PBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-220AB;

FDD4685

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 205 pF;

BSC067N06LS3GATMA1

Infineon Technologies

BSC067N06LS3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 200A IDM, 47mJ EAS, and 0.0067 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and SILICON element material.