SI4946BEY-T1-GE3 by Vishay Intertechnology

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SI4946BEY-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SI4946BEY-T1-GE3
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

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SI4946BEY-T1-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	35 ns
Maximum Drain Current (ID):	6.5 A
Maximum Pulsed Drain Current (IDM):	30 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	8
Maximum Power Dissipation (Abs):	3.7 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	55 ns
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.041 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	7.2 mJ
Maximum Feedback Capacitance (Crss):	44 pF
JEDEC-95 Code:	MS-012AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Maximum Drain Current (Abs) (ID):	6.5 A

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