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PSMN4R8-100BSEJ

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

PSMN4R8-100BSEJ
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 405 W; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
Datasheet

Datasheet

4021 In Stock

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PSMN4R8-100BSEJ Technical Details

TYPE	DESCRIPTION
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	120 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
Maximum Power Dissipation (Abs):	405 W
No. of Elements:	1
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Drain Current (Abs) (ID):	120 A
Peak Reflow Temperature (C):	245
Moisture Sensitivity Level (MSL):	1

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