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AUIRFR5305TRL

Manufacturer

Infineon Technologies
Manufacturer's Part Number

AUIRFR5305TRL
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JEDEC-95 Code: TO-252AA; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

532 In Stock

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AUIRFR5305TRL Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	31 A
Maximum Pulsed Drain Current (IDM):	110 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.065 ohm
Avalanche Energy Rating (EAS):	280 mJ
Other Names:	AUIRFR5305TRL-ND AUIRFR5305TRLTR AUIRFR5305TRLCT SP001519556 AUIRFR5305TRLDKR
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	55 V
Additional Features:	AVALANCHE RATED
Reference Standard:	AEC-Q101
Peak Reflow Temperature (C):	NOT SPECIFIED

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