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AUIRFR5305TRL
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberAUIRFR5305TRL
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JEDEC-95 Code: TO-252AA; Package Style (Meter): SMALL OUTLINE;
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Datasheet
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DetailsAUIRFR5305TRL Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 31 A |
Maximum Pulsed Drain Current (IDM): | 110 A |
Surface Mount: | YES |
No. of Terminals: | 2 |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .065 ohm |
Avalanche Energy Rating (EAS): | 280 mJ |
JEDEC-95 Code: | TO-252AA |
Polarity or Channel Type: | P-CHANNEL |
Minimum DS Breakdown Voltage: | 55 V |
Additional Features: | AVALANCHE RATED |
Reference Standard: | AEC-Q101 |
Peak Reflow Temperature (C): | NOT SPECIFIED |