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| 646 | $0.151 | $97.578 |
FDN5630-F095
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ManufacturerFairchild Semiconductor
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Manufacturer's Part NumberFDN5630-F095
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DescriptionN-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE;
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Datasheet
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DetailsFDN5630-F095 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 1.7 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | Tin (Sn) |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | .5 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (Abs) (ID): | 1.7 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |