IRF840PBF by Vishay Siliconix

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IRF840PBF

Manufacturer

Vishay Siliconix
Manufacturer's Part Number

IRF840PBF
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-220AB;
Datasheet

Datasheet

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IRF840PBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8 A
Maximum Pulsed Drain Current (IDM):	32 A
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.85 ohm
Avalanche Energy Rating (EAS):	510 mJ
Other Names:	*IRF840PBF
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED

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