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CPH6354-TL-W
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ManufacturerOnsemi
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Manufacturer's Part NumberCPH6354-TL-W
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;
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Datasheet
804 In Stock
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DetailsCPH6354-TL-W Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4 A |
| Maximum Pulsed Drain Current (IDM): | 16 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN BISMUTH |
| No. of Terminals: | 6 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .1 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: | CPH6354-TL-W-ND CPH6354-TL-WOSCT CPH6354-TL-WOSDKR CPH6354-TL-WOSTR 2156-CPH6354-TL-W-OS ONSONSCPH6354-TL-W |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e6 |
| Minimum DS Breakdown Voltage: | 60 V |
| Peak Reflow Temperature (C): | 260 |
