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IRF9540PBF
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberIRF9540PBF
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY;
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Datasheet
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DetailsIRF9540PBF Technical Details
TYPE | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 19 A |
Maximum Pulsed Drain Current (IDM): | 72 A |
Sub-Category: | Other Transistors |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 150 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Maximum Drain-Source On Resistance: | .2 ohm |
Avalanche Energy Rating (EAS): | 640 mJ |
Maximum Feedback Capacitance (Crss): | 140 pF |
JEDEC-95 Code: | TO-220AB |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 100 V |
Qualification: | Not Qualified |
Additional Features: | AVALANCHE RATED |
Maximum Drain Current (Abs) (ID): | 19 A |
Peak Reflow Temperature (C): | 260 |