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QTY	Unit Price	Ext Price
871	$3.515	$3,061.565

FQB34N20LTM

Manufacturer

Onsemi
Manufacturer's Part Number

FQB34N20LTM
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Turn On Time (ton): 1150 ns; Package Body Material: PLASTIC/EPOXY;
Datasheet

Datasheet

871 In Stock

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FQB34N20LTM Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	1150 ns
Maximum Drain Current (ID):	31 A
Maximum Pulsed Drain Current (IDM):	124 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Maximum Power Dissipation (Abs):	180 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	1100 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	3.13 W
Maximum Drain-Source On Resistance:	.08 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	640 mJ
Maximum Feedback Capacitance (Crss):	67 pF
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	245

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FQB34N20LTM

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FQB34N20LTM Technical Details

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