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SI7489DP-T1-GE3

Manufacturer

Vishay Intertechnology
Manufacturer's Part Number

SI7489DP-T1-GE3
Description

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Turn Off Time (toff): 315 ns;
Datasheet

Datasheet

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SI7489DP-T1-GE3 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	55 ns
Maximum Drain Current (ID):	28 A
Maximum Pulsed Drain Current (IDM):	40 A
Surface Mount:	YES
Terminal Finish:	Matte Tin (Sn) - annealed
No. of Terminals:	8
Maximum Power Dissipation (Abs):	83 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	315 ns
JESD-30 Code:	R-PDSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.041 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	61 mJ
Other Names:	SI7489DP-T1-GE3DKR SI7489DP-T1-GE3TR SI7489DPT1GE3 SI7489DP-T1-GE3CT
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Peak Reflow Temperature (C):	260

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