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SI7489DP-T1-GE3
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ManufacturerVishay Intertechnology
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Manufacturer's Part NumberSI7489DP-T1-GE3
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DescriptionP-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Turn Off Time (toff): 315 ns;
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Datasheet
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DetailsSI7489DP-T1-GE3 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 55 ns |
| Maximum Drain Current (ID): | 28 A |
| Maximum Pulsed Drain Current (IDM): | 40 A |
| Surface Mount: | YES |
| Terminal Finish: | Matte Tin (Sn) - annealed |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | 83 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 315 ns |
| JESD-30 Code: | R-PDSO-F8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .041 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 61 mJ |
| Other Names: | SI7489DP-T1-GE3DKR SI7489DP-T1-GE3TR SI7489DPT1GE3 SI7489DP-T1-GE3CT |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 100 V |
| Qualification: | Not Qualified |
| Peak Reflow Temperature (C): | 260 |
