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| QTY | Unit Price | Ext Price |
| 261 | $1.235 | $322.335 |
IPA80R650CEXKSA2
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ManufacturerInfineon Technologies
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Manufacturer's Part NumberIPA80R650CEXKSA2
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DescriptionN-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Terminals: 3; Terminal Position: SINGLE; Terminal Finish: TIN;
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Datasheet
261 In Stock
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DetailsIPA80R650CEXKSA2 Technical Details
| TYPE | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 8 A |
| Maximum Pulsed Drain Current (IDM): | 24 A |
| Surface Mount: | NO |
| Terminal Finish: | TIN |
| No. of Terminals: | 3 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .65 ohm |
| Avalanche Energy Rating (EAS): | 340 mJ |
| Other Names: | SP001313394 ROCINFIPA80R650CEXKSA2 2156-IPA80R650CEXKSA2 |
| JEDEC-95 Code: | TO-220AB |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 800 V |
