IPZ40N04S5L4R8ATMA1 by Infineon Technologies

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IPZ40N04S5L4R8ATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPZ40N04S5L4R8ATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Avalanche Energy Rating (EAS): 53 mJ; No. of Elements: 1; JESD-609 Code: e3;
Datasheet

Datasheet

675 In Stock

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IPZ40N04S5L4R8ATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	40 A
Maximum Pulsed Drain Current (IDM):	160 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-N8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0067 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	53 mJ
Other Names:	2156-IPZ40N04S5L4R8ATMA1 IPZ40N04S5L4R8ATMA1CT INFINFIPZ40N04S5L4R8ATMA1 SP001172564 IPZ40N04S5L4R8ATMA1TR IPZ40N04S5L4R8ATMA1-ND IPZ40N04S5L4R8ATMA1DKR
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	40 V
Reference Standard:	AEC-Q101

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