IRFP450PBF by Vishay Siliconix

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IRFP450PBF

Manufacturer

Vishay Siliconix
Manufacturer's Part Number

IRFP450PBF
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
Datasheet

Datasheet

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IRFP450PBF Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	14 A
Maximum Pulsed Drain Current (IDM):	56 A
Surface Mount:	NO
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.4 ohm
Avalanche Energy Rating (EAS):	760 mJ
Other Names:	*IRFP450PBF
JEDEC-95 Code:	TO-247
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Peak Reflow Temperature (C):	NOT SPECIFIED

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