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IRFP460

Manufacturer

NXP Semiconductors
Manufacturer's Part Number

IRFP460
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .27 ohm; JEDEC-95 Code: TO-247;
Datasheet

Datasheet

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IRFP460 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	1300 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	20 A
JEDEC-95 Code:	TO-247
Maximum Pulsed Drain Current (IDM):	80 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	500 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.27 ohm

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