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CSD19536KTTT

Manufacturer

Texas Instruments
Manufacturer's Part Number

CSD19536KTTT
Description

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 61 pF; Minimum DS Breakdown Voltage: 100 V; Maximum Time At Peak Reflow Temperature (s): 30;
Datasheet

Datasheet

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CSD19536KTTT Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	200 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	YES
Terminal Finish:	MATTE TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0028 ohm
Moisture Sensitivity Level (MSL):	2
Avalanche Energy Rating (EAS):	806 mJ
Maximum Feedback Capacitance (Crss):	61 pF
JEDEC-95 Code:	TO-263AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Additional Features:	AVALANCHE RATED
Peak Reflow Temperature (C):	260

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