IPT015N10N5ATMA1 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

All prices are in USD

Bulk

QTY	Unit Price	Ext Price
969	$0.686	$664.637

IPT015N10N5ATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPT015N10N5ATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: FLAT; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 100 V;
Datasheet

Datasheet

969 In Stock

Popular Products

1N4148

Good-ark Electronics

RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V; No. of Phases: 1;

Details

LM358MX

Onsemi

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

Details

IRLML6402TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;

Details

ABS07-32.768KHZ-T

Abracon

Abracon ABS07-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring 0.032768 MHz frequency precision in a compact surface-mount design with gold over nickel finish.

Details

BAV99

North American Philips Discrete Products Div

RECTIFIER DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .1 A;

Details

2N2222A

ROHM

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;

Details

BSS138-7-F

SPC TECHNOLOGY/ MULTICOMP

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;

Details

2N2222A

Digitron Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

Details

FDN306P

Onsemi

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

Details

LM555CMX

Fairchild Semiconductor

PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

Details

1N4148

Daco Semiconductor

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

LM107H

Rochester Electronics

OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;

Details

LM358N

Samsung

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

Details

RC0402FR-071KL

Yageo

The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.

Details

LL4148

Good-ark Electronics

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

Details

1N4148

Pro-an Electronic

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

Details

2N7002

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;

Details

MMBT3906LT1G

Onsemi

MMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact SOT-23 package. Suitable for use in temperature-sensitive environments with an operating range from -65°C to 150°C.

Details

LM358AN

Texas Instruments

LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.

Details

DS18B20+

Maxim Integrated

TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;

Details

IPT015N10N5ATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	32 A
Maximum Pulsed Drain Current (IDM):	1200 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0015 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	652 mJ
Other Names:	IPT015N10N5ATMA1CT IPT015N10N5ATMA1DKR IPT015N10N5ATMA1TR SP001227040 Q10142123
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	100 V

Category Top Products

STN1NK80Z

STMicroelectronics

STN1NK80Z by STMicroelectronics is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. It features 5A IDM, 16 ohm RDS(on), and 50mJ EAS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.

FDD8424H_F085A

Onsemi

FDD8424H_F085A by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 40V DS breakdown voltage, 55A max pulsed drain current, and 0.024 ohm max drain-source resistance. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance.

SQM40P10-40L_GE3

Vishay Intertechnology

The Vishay Intertechnology SQM40P10-40L_GE3 is a P-channel power FET with 100V DS breakdown voltage and 160A max pulsed drain current. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Features include a built-in diode, 0.04 ohm max RDS(on), and small outline package style.

IRFR9024PBF

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 60 V;

NDT3055

National Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain-Source On Resistance: .1 ohm; Package Body Material: PLASTIC/EPOXY;

IRFR3710ZTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Drain Current (Abs) (ID): 42 A; Case Connection: DRAIN;

BSS123

Calogic

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Operating Mode: ENHANCEMENT MODE;

IRF9540PBF

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 72 A; Terminal Form: THROUGH-HOLE;

IRFP460

Thomson Consumer Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 20 A;

GA05JT12-263

Genesic Semiconductor

Power Field-Effect Transistors;

IPD90P04P405ATMA1

Infineon Technologies

IPD90P04P405ATMA1 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 360A IDM, and 0.0047 ohm RDS(ON). It's used in power applications due to its 60mJ EAS rating and ENHANCEMENT MODE operation.

SUD50P06-15-GE3

Vishay Intertechnology

Vishay Intertechnology's SUD50P06-15-GE3 is a P-channel Power FET with 60V DS breakdown voltage and 80A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.015 ohm max RDS(on), and operates in enhancement mode.

IRF7410TRPBF

Infineon Technologies

Infineon's IRF7410TRPBF is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 65A IDM, 0.007 ohm RDS(on), and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package, it can withstand -55 to 150 °C temperatures.

IRFL9014TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE;

BSC067N06LS3GXT

Infineon Technologies

BSC067N06LS3GXT by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 200A and 0.0067 ohm RDS(on), operating in enhancement mode up to 150°C. This MOSFET comes in a small outline package with built-in diode, suitable for high-power electronic designs.

IRF9540NSTRLPBF

Infineon Technologies

Infineon's IRF9540NSTRLPBF is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 92A IDM and 84mJ EAS, it operates in ENHANCEMENT MODE with -55 to 175°C temperature range. The PLASTIC/EPOXY package has GULL WING terminals and DRAIN connection, making it suitable for high-power circuits.

FDS6982AS

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .0135 ohm; Package Style (Meter): SMALL OUTLINE;

IRF7103TRPBF

International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; Additional Features: LOGIC LEVEL COMPATIBLE;

SQ2318AES-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQ2318AES-T1_GE3 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A IDM. Ideal for applications requiring high current handling capabilities, such as power supplies and motor control systems. Features include 8A ID, 0.031ohm RDS(on), and 46pF Crss for efficient performance in various electronic devices.

IRFP4468PBF

Infineon Technologies

IRFP4468PBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a max IDM of 1120A and EAS of 740mJ, ideal for SWITCHING applications. With 0.0026 ohm RDS(on) and 520W Pdiss, it operates in ENHANCEMENT MODE at up to 175°C.