IPT015N10N5ATMA1 by Infineon Technologies

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IPT015N10N5ATMA1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IPT015N10N5ATMA1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: FLAT; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 100 V;
Datasheet

Datasheet

969 In Stock

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IPT015N10N5ATMA1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	32 A
Maximum Pulsed Drain Current (IDM):	1200 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	8
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F8
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0015 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	652 mJ
Other Names:	IPT015N10N5ATMA1CT IPT015N10N5ATMA1DKR IPT015N10N5ATMA1TR SP001227040 Q10142123
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	100 V

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