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IRF640

Manufacturer

Comset Semiconductors
Manufacturer's Part Number

IRF640
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
Datasheet

Datasheet

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IRF640 Technical Details

TYPE	DESCRIPTION
Avalanche Energy Rating (EAS):	280 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	18 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	72 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	200 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	.18 ohm

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