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JANTX2N6796

Manufacturer

International Rectifier
Manufacturer's Part Number

JANTX2N6796
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
Datasheet

Datasheet

936 In Stock

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JANTX2N6796 Technical Details

TYPE	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	105 ns
Maximum Drain Current (ID):	8 A
Maximum Pulsed Drain Current (IDM):	32 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	25 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
Maximum Turn Off Time (toff):	85 ns
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	25 W
Maximum Drain-Source On Resistance:	.195 ohm
Avalanche Energy Rating (EAS):	4.3 mJ
JEDEC-95 Code:	TO-205AF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Additional Features:	HIGH RELIABILITY
Reference Standard:	MIL-19500/557
Maximum Drain Current (Abs) (ID):	8 A

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Operating Temperature: 175 Cel; Maximum Pulsed Drain Current (IDM): 440 A;

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IRLML6401GTRPBF

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NTF3055L108T1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.12 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 2.1W and can withstand temperatures up to 175°C.

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IRF9540NPBF

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