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CSD88537NDT

Manufacturer

Texas Instruments
Manufacturer's Part Number

CSD88537NDT
Description

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
Datasheet

Datasheet

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CSD88537NDT Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	8 A
Maximum Pulsed Drain Current (IDM):	108 A
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	8
Maximum Power Dissipation (Abs):	2.1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.019 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	51 mJ
Maximum Feedback Capacitance (Crss):	5.2 pF
JEDEC-95 Code:	MS-012AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Additional Features:	AVALANCHE RATED
Peak Reflow Temperature (C):	260

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