IRLML0100TRPBF-1 by Infineon Technologies

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IRLML0100TRPBF-1

Manufacturer

Infineon Technologies
Manufacturer's Part Number

IRLML0100TRPBF-1
Description

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain-Source On Resistance: .22 ohm; Package Style (Meter): SMALL OUTLINE;
Datasheet

Datasheet

389 In Stock

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IRLML0100TRPBF-1 Technical Details

TYPE	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	1.6 A
JEDEC-95 Code:	TO-236AB
Maximum Pulsed Drain Current (IDM):	7 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	100 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Drain-Source On Resistance:	.22 ohm
Moisture Sensitivity Level (MSL):	1

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